BST120 |
RFQ for BST120 Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| BST120 | - | SOT-89 | 07/08+ |
P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.
Features |
| · Very low RDS(on)· Direct interface to C-MOS· High-speed switching· No second breakdown |
| Drain-source voltage | -VDS | max. | 60 V |
| Gate-source voltage (open drain) | ±VGSO | max. | 20 V |
| Drain current (DC) | -ID | max. | 0.3 A |
| Drain current (peak) | -IDM | max. | 0.8 A |
| Total power dissipation up to Tamb = 25 (note 1) | Ptot | max. | 1 W |
| Storage temperature range | Tstg | -65 to + 150 | |
| Junction temperature | Tj | max. | 150 |
| THERMAL RESISTANCE | |||
| From junction to ambient (note 1) | Rth j-a | = | 125 K/W |
Note
1. Transistor mounted on ceramic substrate: area = 2,5 cm2 and thickness = 0,7 mm.
| Models | MFG | Pack |
| BST100 | ||
| BST110 | ||
| BST120 | SOT-89 | |
| BST122 | SOT-89 | |
| BST15 | SOT-89 | |
| BST15TA | ||
| BST16 | SOT-89 | |
| BST39 | SOT-89 | |
| BST39.115 | ||
| BST39115 | ||
| BST39TA | ||
| BST40 | ||
| BST40TA | ||
| BST50 | Philips Semiconductors | SOT-89 |
| BST50/1/2 | ||
| BST50115 | ||
| BST51 | SOT-89 | |
| BST52 | SOT223 | |
| BST5210G | ||
| BST52115 | ||
| BST52C3V93.9V | ||
| BST52TA | ||
| BST60 | Philips Semiconductors | SOT-89 |
| BST60TA | ||
| BST61 | SOT-89 | |
| BST61TA | ||
| BST62 | SOT-89 | |
| BST62-70 | ||
| BST62-70 /627 | ||
| BST62-70TA | ||
| BST-12/125-D48-C | ||
| BST-108-08-G-D-230-RA | ||
| BST100 | ||
| BSS92 | ||
| BSS89 | ||
| BSS88 | ||
| BSS87E6327T | ||
| BSS87E6327 | ||
| BSS87,115 | ||
| BSS87 | ||
| BSS84W-7-F | ||
| BSS84W-7 | ||
| BSS84W | ||
| BSS84V-7 | ||
| BSS84V | ||
| BSS84PW | ||
| BSS84P-E6327 | ||
| BSS84P | ||
| BSS84LT1G | ||
| BSS84LT1 |
